Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's

Techniques which allow us to determine the series source, drain, and gate resistances and the electron saturation velocity of ion-implanted GaAs FET's are described. These techniques are based on the "end" resistance measurements. The theory of this method is developed and used for a new interpretation of the "end" resistance measurements. The values of the series resistances determined by this technique are shown to be in an excellent agreement with those obtained by the modified Fukui method. The values of the electron saturation velocity varying from 1.0 × 10
⁵
m/s to 1.3 × 10
⁵
m/s are obtained using the end resistance method. The proposed set of measurements is simple and accurate enough to be used as a routine characterization technique for GaAs FET's.