The Hooge parameters of n+-p-n and p+-n-p silicon bipolar transistors

We establish here again the fact that the Hooge parameters of NEC57807 n
⁺
-p-n and in GE82 p
⁺
-n-p silicon bipolar transistors are orders of magnitude smaller than the value 2 × 10
^-3
postulated earlier. In the NEC57807 devices neither the base 1/
f
noise nor the collector 1/
f
noise is of the diffusion-fluctuation type. In the GE82 devices the collector 1/
f
noise is not of the diffusion-fluctuation type, but the base 1/
f
noise is of that type. We have given, also, a theory of the effects of surface recombination fluctuations in the emitter-base space-charge region on the base noise and the collector noise and find a noise spectrum that varies as
I_\gamma
where 0.5 < γ < 1.6 when going from small to large currents.