Modeling the generation current due to donor-acceptor twins in silicon p-n junctions

The experimental static current-voltage
I-V
characteristics of almost ideal silicon p-n junctions are not adequately described by the classic Sah-Noyce-Shockley theory. The
I-V
characteristics are accurately modeled by admitting the presence of a new class of defects in addition to Shockley-Read-Hall generation-recombination centers. The new center, modeled as a donor-acceptor twin, behaves as a pure generation center.