Improvement of SOI/MOSFET characteristics by recrystallizing connected silicon islands on fused silica

Al-gate n-channel MOSFET's were fabricated on isolated and connected islands which were recrystallized on fused silica substrates using an RF-heated zone melting recrystallization method (RF-ZMR). The field-effect mobility of the device fabricated on the connected silicon island was about 900 cm
²
/V.s, which was twice as that of the device fabricated on the isolated island, and its leakage current was 10
^-13
A/µm, which was two orders lower than that of the latter. These observations were attributed to realization of (100) oriented silicon and decrease of positive charge density at the silicon-fused silica interface by recrystallizing the connected polycrystalline silicon island.