Trench-isolated transistors in lateral CVD epitaxial silicon-on-insulator films

Completely dielectrically isolated, p-channel MOS transistors have been obtained by lateral chemical vapor deposition (CVD) epitaxial overgrowth of buried oxide layers and subsequent lateral isolation with refilled trenches. The transistor characteristics are similar to those in bulk control wafers. Isolation between the device island and the substrate is approximately 10
¹²
Ω.