Theoretical investigation of n+-n-n+Ga0.47In0.53As TEO's up to the millimeter-wave range

Theoretical investigations of n
⁺
-n-n
⁺
Ga
0.47
In
0.53
As TED's have been performed up to the millimeter-wave range. Accumulation layer transit time mode of oscillation has been pointed out up to about 50 GHz. n
⁺
-n-n
⁺
GaInAs devices exhibit higher output power and efficiency in the 30-GHz region than GaAs and InP similar devices, but their frequency behavior is poor because of their higher energy relaxation time.