Small geometry MOS transistor capacitance measurement method using simple on-chip circuits

A method of measuring the gate capacitance of very small geometry devices using simple on-chip circuits is described. Short-channel effects observed in gate capacitance measurements of an MOS transistor with W
eff
/L
eff
= 9.2 µm/0.8 µm are presented. Measurement results show that the resolution of the technique is much better than 0.1 fF.