Fabrication of Mo-gate/Ti—silicide-clad-moat MOS Devices by use of multilayer-glass depositions

A novel technique is described which uses undoped and doped glass depositions at the gate level to make a molybdenum-metal-gate process compatible with a direct-react titanium-silicide clad-moat process. The method is applicable to submeter micro design-rule MOS IC devices and yields 0.3 Ω and 2.0 Ω for gate and moat levels, respectively.