Burst and low-frequency generation-recombination noise in double-heterojunction bipolar transistors

The low-frequency noise in a double-heterojunction bipolar transistor (DHBT) consisted of burst noise and generation-recombination g-r noise. The current dependence of the base burst noise with floating collector was of the form I
B
³
and the current dependence of the collector g-r noise with HF short circuited base was as I
C
^3/2
. The centers involved in the noise generation had an activation energy of about 0.40 eV, with an indication of a second center of lower energy in the collector noise.