Low-frequency diffusion noise in GaAs MESFET's

We report here on low-frequency diffusion noise of GaAS MESFET's. The Poole-Frenkel effect gives a shift of the corner frequency (f = D/πL
²
). From the measurements the activation energy of the diffusing ions is found to be 0.16 eV. At 77 K the diffusion noise is frozen out and the device has a 1/f spectrum.