A new field isolation technology employing lift-off patterning of sputtered SiO2films

A new field isolation technology for LSI devices is described. This technology features low-temperature (<150° C) sputtered SiO
2
and photoresist lift-off. MOS devices are fabricated using this isolation technology. It is shown that bird's-beak-free field oxide is formed using a fabrication process which is shorter than that using other isolation methods. It is shown that the narrow-channel effect is significantly reduced in MOSFET's fabricated with this technology.