An improved forward I-V method for nonideal Schottky diodes with high series resistance

Two methods are described to obtain the value of the series resistance
(R)
of a Schottky diode from its forward I-V characteristic. The value of
R
is then used to plot the curve ln (
I
) versus
V_{D} (= V - IR)
which becomes a straight line even if ln
(I)
versus
V
does not. The ideality factor
n
and the Schottky-barrier height
\Phi_{B0}
of the diode then follow from the standard procedure. The main advantages of the methods are: 1) a linear regression can be used to calculate the value of
R
, 2) many data points are used over the whole data range which raises the accuracy of the results, and 3) the validity of constant
R
assumption can be checked by the linearity of the ln
(I)
versus V
D
curve. The methods are illustrated on the experimental data of a real diode.