Transient capless annealing of ion-implanted GaAs

A method for high-temperature capless activation of implanted gallium arsenide has been developed that uses high-purity semi-insulating PBN LEC gallium arsenide [1] both as implant host and stabilizing medium. This capless technology, "transient capless annealing," has shown high activation of implanted dose (85 percent) with high uniformity (± 4.5 percent) and abrupt (500 Å/decade) carrier concentration depth profiles at 1.5 × 10
¹⁷
cm
^-3
doping. Hall measurements taken from activated films show an electron mobility of 4500 cm
²
/V . s at room temperature. S-band integrated circuits fabricated by transient capless annealing of discretely implanted
²⁹
Si
⁺
delivered 20 dB of gain and 29 dB . m of output power between 3.0 and 3.6 GHz. The high-throughput batch-processing nature of transient capless annealing makes this process commercially attractive for high-yield integrated-circuit production in gallium arsenide.