Device design for the submicrometer p-channel FET with n+polysilicon gate

CMOS has become one of the most important technologies for VLSI applications. If the conventional n
⁺
polysilicon gate approach is to be maintained for VLSI CMOS, the p-channel transistor will cause problems in scaling down to submicrometers due to the counter-doping that is necessary to adjust the threshold voltage to a reasonable value. The depth of the p
⁺
source-drain junctions will also cause short-channel effects. This paper presents in-depth analysis of the submicrometer p-channel transistor structure. The effects of the counter-doping junction depth and the source-drain junction depth on the device subthreshold characteristics are discussed. Criteria for the submicrometer p-channel transistor structure with good subthreshold characteristics are presented. A new technique for minimizing the counter-doping junction depth is also presented. Submicrometer p-channel transistors with n
⁺
polysilicon gate were fabricated using this new technique as well as techniques for forming very shallow p
⁺
-junctions. Devices with submicrometer channel lengths showed very good subthreshold characteristics, as predicted by simulations.