The influence of surface charge and bevel angle on the blocking behavior of a high-voltage p+-n-n+device

The breakdown voltage of p
⁺
-n-n
⁺
devices is investigated. The two-dimensional Poisson equation is solved using the finite difference method. The questions of optimal bevelling and the influence of surface charges on the blocking capability are extensively studied. Furthermore, it is investigated to replace a small bevel angle at the n
⁺
- region by a mesa-like structure.