Channel potential and channel width in narrow buried-channel MOSFET's

A new method is described for determining the effective width over which incremental charge spreads in a narrow buried-channel transistor. The method is based on the transconductance in the buried-channel mode. Experimental results for effective widths and channel potential shifts are presented for MOSFET's with effective channel widths from 2 to 10 µm. Two-dimensional numerical calculations verify the experimental results.