Reply to "comments on 'a method for determining energy gap narrowing in highly doped semiconductors'"

The interpretation by del Alamo and Swanson of recombination-current data in highly doped silicon is clarified by making explicit their key assumptions. This leads to our reaffirming the merit of using temperature dependence in determining energy gap narrowing. This use gives newly determined low values of minority-carrier mobility and diffusivity, accompanied by a simple physical picture recently published elsewhere.