A current-generating BSF silicon solar cell fabricated through masked ion implantation

A preferentially current-generating back-surface-field (BSF) silicon solar cell with a near-ideal value of the short-circuit current density J
SC
under AM1 conditions has been developed through masked ion implantation of the n
⁺
-p junction. The BSF cells, fabricated in industrial conditions, possess a conversion efficiency η and a fill-factor FF up to 14.2 and 76.8 percent, respectively. The dependence of J
SC
, η, and FF on technological parameters are outlined in this letter.