Experimental performance of the buried-channel acoustic charge transport device

High-speed electron transport is accomplished in a new type of buried-channel charge transfer device which is based on the nonlinear acoustoelectric interaction between large amplitude surface acoustic waves (SAW) and electrons in GaAs. The performance of the acoustic charge transport (ACT) device is enhanced by design improvements which provide precise channel definition and charge injection structures. A transfer efficiency in excess of 0.996 has been measured in an experimental device operating at the SAW clock frequency of 358 MHz.