Millimeter-wave GaAs distributed IMPATT diodes

Millimeter-wave oscillations were obtained in distributed GaAs IMPATT diodes prepared by molecular beam epitaxy (MBE). Both single-drift-region and double-drift-region structures were used to fabricate various length devices, up to 1.25 mm, to investigate oscillation frequency dependence on device length. Output power levels of 1.5 and 0.5 W were obtained at 22 and 50 GHz, respectively, using 500-ns pulses. The highest frequency of oscillation observed was 89 GHz.