A high-performance CMOS/SOS device with a gradually doped source—Drain extension structure

A gradually doped source-drain extension (GDDE) CMOS/SOS structure with n+ poly gate has been used to fabricate a high-performance CMOS/SOS inverter ring oscillator and 1%8 static binary counter. The 0.8-µm gate ring oscillator shows 80-ps stage delay at
V_{DD} = 5
V, and it achieves 0.1 pJ of speed-power product with 95-ps stage delay. The plasma-etched epi island minimizes the edge leakage current, as shown in subthreshold characteristics.