Novel real-space hot-electron transfer devices

A new class of devices based on hot-electron transfer between two conducting layers is proposed. The essential feature of these devices is a pronounced negative differential resistance (NDR) in the drain circuit, controlled by gate and substrate voltages. This allows a novel type of bistable logic element, which, although being unipolar, is comparable to the CMOS inverter in that a significant current is drawn only during switching. Another possible application is a gate-controlled microwave generator and amplifier. In the present work, the above device concepts are analyzed in the instance of GaAs/ GaAlAs heterojunction realizations.