Monte Carlo simulation of reflecting contact behavior on ballistic device speed

We present a Monte Carlo simulation of the behavior of a reflecting n-n
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contact in InP. Electrons are injected at high energy into the InP and are accelerated by an applied electric field over a length of ∼ 1000 Å. At the collecting contact they encounter a possible reflection back into the device. The reflection coefficient at the contact is chosen to vary between 0 and 0.70. The results show that the average electron drift velocity is greatly lowered at low fields throughout the entire device by the reflection at the contact.