Improvement of photoluminescence of molecular beam epitaxially grown GaxAlyIn1-x-yAs by using an As2molecular beam

We report the use of an As
2
(instead of As
4
) beam during molecular beam epitaxial (MBE) growth of Ga
x
Al
y
In
1-x-y
As layers, lattice-matched to InP substrate. We also show that use of the As
2
beam improves the room-temperature photoluminescence intensities of both In
0.53
Ga
0.47
As and Ga
0.39
Al
0.08
In
0.53
As epilayers with more significant improvement for the latter. The substrate temperature employed was ∼ 580°C for both.