A novel gate—Cathode configuration with two interdigitation levels for GTO thyristors

A new gate-cathode concept leading to a substantial improvement of the main parameters of the gate turn-off (GTO) thyristors has been developed and successfully tested on medium power devices. The distinctive feature of the novel pattern with two interdigitation levels (TIL) consists in its unique ability to bring under designer's control the processes of sweeping-out of the stored charge and of the anode current squeezing.