Transistors made in single-crystal SOI films

Test transistors with gate lengths ranging from 10 to 4 µm were made in laser-recrystallized silicon on insulator films. A capping layer of patterned antireflecting stripes of Si
3
N
4
was used to grow large single-crystals of silicon. MOS transistors show good electrical characteristics and a surface mobility up to 650 cm
²
/V.s for electrons. With the exception of the recrystallization procedure, the wafers followed a fully standard NMOS process, including the growth of a LOCOS field oxide.