Theoretical analysis on threshold characteristics of surface-channel MOSFET's fabricated on a buried Oxide

Simple models for threshold characteristics of surface-channel MOSFET's, which are fabricated on a buried oxide covered by an electric field shielding layer, are proposed. The electric field shielding effect is taken into account when the Poisson's equation is solved. Threshold voltage expressions are derived from the solution of the Poisson's equation and the surface-channel charge neutrality relationship. Theoretical analysis shows that the thinner silicon layer leads to enhancement of the electric field which results in the reduction of the short-channel effect.