A dielectrically isolated complementary bipolar technique for analog/Digital compatible LSI's

A dielectrically isolated complementary bipolar technique has been developed for use in analog LSI's or analog/digital compatible LSI's. This process makes it possible to form vertical double-diffused transistors in complementary islands and to obtain a high breakdown voltage of more than 350 V in spite of using shallow junctions with a depth of less than 2 µm. The gain bandwidth product f
T
is 450 and 200 MHz for n-p-n and p-n-p transitors, respectively. With this process, a subscriber line interface LSI that includes three functions (battery feed, supervision, and hybrid) has been successfully achieved within a 12.6 mm
²
die area.