Electron—Hole recombination antiblooming for virtual-phase CCD imager

This paper describes a new antiblooming concept employing localized and controlled charge removal from a photosite based on electron-hole recombination via interface traps. The concept can be applied to various types of CCD and CID devices, and is demonstrated on a
490V \times 581H
frame transfer virtual-phase CCD imager. Results of antiblooming experiments as well as experiments addressing some of the physical parameters of the electron-hole recombination process are given.