Numerical simulation of GaAs/GaAlAs heterojunction bipolar transistors

A numerical analysis program for the 1-dimensional simulation of GaAs/GaAlAs heterojunction bipolar transistors is described. Calculations for a representative transistor structure indicate that a cutoff frequency, f
t
, of 100 GHz is obtainable. To attain such a high value, the transistor design incorporated a graded-bandgap base region and relatively high emitter doping (5 × 10
¹⁷
cm
^-3
), and the device was operated at high current density (5 × 10
⁴
A/cm
²
). Transient electron velocity overshoot effects were also included.