Self-registered gradually doped source drain extension short channel CMOS/SOS devices

The oxide sidewall-spacer technology was utilized to fabricate CMOS/SOS devices with the self-registered gradually doped source drain extension structure. No additional photo masking or ion implantation steps are required than in the case of a conventional polysilicon gate CMOS/SOS process. The devices revealed significant improvements in the breakdown voltage, leakage current and the short channel effect.