Preparation and properties of molecular beam epitaxy grown (Al0.5Ga0.5)0.48In0.52As

The first reported growth of the quaternary AlGaInAs on an InP substrate by molecular beam epitaxy had an equal aluminum-to-gallium mole fraction ratio, and exhibited a 5 K bandgap energy of 1.237 eV. This is intermediate between the 5 K band gap energy of Ga
0.47
In
0.53
As (0.810 eV) and that of Al
0.48
In
0.52
As (1.56 eV). A Schottky diode and a MESFET were fabricated on this material.