101-Stage 2 µm gate ring oscillators in laser-grown silicon islands embedded in SiO2

E/D MOS test transistors and 101-stage 2 µm gate E/D MOS ring oscillators were fabricated in laser-grown single- and multicrystal islands embedded in oxide substrates. Most transistors showed good
I-V
characteristics, short-channel effects, and kink effects. Ring oscillators had a switching delay per stage (τ
Pd
) of 0.4 ns and a power-delay product (τ
_{Pd} \middot P_{d}
) of 2.5 PJ at a supply voltage (V
DD
) of 10-15 V. It was noted that different crystal orientations of the islands posed no difficulty in processing and V
T
control when applied to short channel devices, and that enhanced boundary diffusion results in occasional malfunctional transistors and erroneous high surface electron mobilities (µ
se
).