Simulation of non steady-state transport in GaAs and InP millimeter Impatt diodes

Large-signal simulations of non-stationary transport in GaAs and InP millimeter Impatt diodes have been performed. This study of the influence of non steady-state features on the performance of a 100 GHz operation shows that non punch-through structures still present interesting performances at this frequency. However, for this type of structure, InP exhibits significant advantages over GaAs for the manufacture of high efficiency diodes.