The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K

Electron drift velocities in n-type In
0.53
Ga
0.47
As have been measured at 300 K using a microwave time-of-flight technique at electric field strengths from about 10 kV/cm to 104 kV/cm. The electron velocity-field characteristic for n-type In
0.53
Ga
0.47
As exhibits a larger negative differential mobility and a lower high field velocity than is obtained with GaAs.