Pulse annealing of implanted InP with minimal phosphorus loss

Electron pulse annealing has been used to activate implanted layers in InP without the phosphorus loss dominance in earlier work. Reduced pulse energies were employed at which the phosphorus loss could be curtailed but which necessitated supplemental thermal heating of the substrate for activation. Relatively shallow implants (75 keV, 4 × 10
¹⁴
Si+cm
^-2
) so annealed show minimum yields of ∼ 5% from backscattering and are doped to over 10
¹⁹
cm
^-3
with mobilities of 500 cm
²
V
^-1
sec
^-1
.