A vertically isolated self-aligned transistor—VIST

A vertically isolated self-aligned transistor (VIST) has been developed to make possible high-speed low-power dissipation bipolar devices suitable for LSI. This VIST consists of a bird's beak free oxide isolated structure and a high impurity density inactive base self-aligned to the polysilicon emitter. A flat emitter transistor with a self-aligned base is developed by forming an inactive high impurity density base region with an ion-implantation method using a polysilicon emitter as a mask. The transistors exhibit uniform current gain even to current levels as low as 10
^-8
A. The f
t
value of this transistor is 6 GHz. The ring oscillators and counter are fabricated using the 13 × 6 µm
²
transistor cell. The power and delay product is 0.12 pJ.