A design consideration on GaAs MESFET structure for UHF applications

A GaAs MESFET structure for UHF applications is designed by taking a tradeoff between noise performance and input impedance. In the structure, a monolithic microwave circuitry composed of a resistor with a capacitor in series is introduced on a chip between the gate and source electrodes. The MESFET fabricated on the basis of the design consideration has demonstrated, in UHF, the reduced |S
11
| at a relatively small expense Of the low noise performance.