Electron and hole mobilities in silicon as a function of concentration and temperature

An analytical expression has been derived for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility. The resulting expression allows one to obtain electron and hole mobility as a function of concentration up to
\sim 10^{20}
cm
^-3
in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.