An ultrahigh speed modulated barrier photodiode made on P-type gallium arsenide substrates

We demonstrate a modulated barrier photodiode (MBP) grown by molecular beam epitaxy on p-type gallium arsenide substrates. This device has an ultrahigh response speed with a rise time <30psec and a full width at half maximum <50psec. A DC optical gain of 90 has also been measured for an incident power in the nanowatt range.