An In0.53Ga0.47As/Si3N4n-channel inversion mode MISFET

We describe the operation of an n-channel inversion-mode In
0.53
Ga
0.47
As MISFET with a Si
3
N
4
insulating layer. This device exhibits a transconductance of 2 mS/mm, which represents an order of magnitude improvement over previously reported In
0.53
Ga
0.47
As MISFET results.