Low dark-current, high-efficiency planar In0.53Ga0.47As/InP P-I-N photodiodes

We have fabricated high quantum efficiency, high speed, low dark-current In
0.53
Ga
0.47
As/InP p-i-n planar photodiodes Which meet the performance requirements of long-wavelength optical communications systems. The diodes employ plasma deposited SiN
x
as a mask to Zn diffusion. The dark-current density at 10 V is J = 5 × 10
^-5
A/cm
²
with a corresponding capacitance of C = 5 × 10
^-9
F/cm
²
.