Laser recrystallized polysilicon on SiO2for high performance resistors

We demonstrate, for the first time, a technique for the fabrication of polysilicon resistors with excellent control and temperature characteristics: a standard deviation of 2.5 Ω and temperature variation of -5.6% from 25° to 125°C for 1.96 K Ω, 4.5 × 10
¹⁴
cm
^-2
Boron implanted polysilicon resistors. The technique is based on fabricating resistors in laser recrystallized polysilicon on SiO
2
. Resistor performance is compared to that of similar resistors fabricated in standard LPCVD polysilicon and in single crystal silicon.