Pulsed ionizing radiation recovery characteristics of MSI GaAs integrated circuits

GaAs Schottky Diode FET Logic Divide-by 8 circuits have been characterized for transient response when exposed to 20 ns FXR pulses at 25°C. A logic upset threshold of about 10
⁸
rad/s was observed. At dose rates of 2 × 10
¹⁰
rads/s, functional operation was restored in 5 µs. A discussion of logic upset mechanisms is presented, attempting to explain both short and long term recovery observations.