The probability for ballistic electron motion in n-GaAs

By choosing the value of P = e
⁺¹
as a probability criterion, ballistic electron motion in n-GaAs devices is investigated. The scattering processes due to optical phonons, intervalley phonons of Γ &rarr L and Γ → X and acoustic phonons are included in the calculations. The relation between the length of the active region and the applied voltage at 77°K and 300°K is discussed. This provides a guide to ballistic electron device design.