Reliability of 0.87 µm (Al,Ga)As double heterostructure lasers with Ga(As,Sb) active layers

Double-heterostructure injection lasers with additions of 1% Sb to the GaAs active layer have been found to have significantly improved reliability compared to lasers with binary GaAs active layers. Lasers with extrapolated room temperature median lifetimes of 10
⁵
hours have Ga(As,Sb) active layers that are lattice matched to the Al
0.4
Ga
0.6
As confinement layers. Furthermore, the addition of Sb to the LPE active layer growth melt apparently improves the initial nucleation and growth uniformity of the active layer.