High efficiency InGaAsP photovoltaic power converter

Photovoltaic power converters have been fabricated in the InGaAsP material system. The devices are optimized to convert monochromatic light at 1.06 µm. An extremely high conversion efficiency of 43% with antireflection coating has been achieved. The best device has an open circuit voltage of 0.73 V and a short circuit current of 4 mA when illuminating with 4.85 mW 1.06 µm Nd-Yag laser radiation. A saturation current density as low as 10
^-9
A/cm
²
has been obtained. The fill factor of the cell is 0.72.