N-Channel MOSFETs with WSi2gate

Tungsten silicide gate depletion- and enhancement-mode NMOS transistors were fabricated. The transistor characteristics revealed the excellent compatability of WSi
2
as gate electrode for MOS integrated circuits. Electron mobility of channel at saturation were found to be 210 cm
²
/v sec for enhancement-mode transistor and 110 cm
²
/v sec for depletion-mode transistor.