A model of a narrow-width MOSFET including tapered oxide and doping encroachment

A closed-form analytical expression is developed to predict the threshold voltage of a narrow-width MOSFET. The analytical expression developed is the first to include the effects of a recessed tapered oxide, the depletion charge under the thick recessed field oxide due to gate contact overlap and field doping encroachment at the channel edges. The theory is compared with experimental results and the agreement is dose.