Exploration of electron-beam writing strategies and resist development effects

An electron-beam exposure program being developed in conjunction with program SAMPLE (Simulation and Modeling of Profiles in Lithography and Etching) is used to explore writing strategies and a modification to the development model for electron-beam lithography. In particular, a processing approach based on an initial resist thinning followed by a secondary exposure is explored and compared with more conventional single exposure strategies. Profile description parameters are introduced to quantitatively describe the profile shape and sensitivity to development time. In addition, the introduction of an anisotropic component in the resist development model is shown to result in better agreement of simulated profiles with experiment.